| PART |
Description |
Maker |
| APT2X61D60J APT2X60D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 60A
|
ADPOW[Advanced Power Technology]
|
| APT2X31D100J APT2X30D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 30A
|
ADPOW[Advanced Power Technology]
|
| APT2X100S20J APT2X101S20J |
HIGH VOLTAGE SCHOTTKY DIODES 高压肖特基二极管
CONNECTOR ACCESSORY 高压肖特基二极管
DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Microsemi, Corp.
Advanced Power Technology, Ltd.
|
| STE180N05 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| STE140NF20D |
N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package
|
STMicroelectronics
|
| HS9-302RH-8 HS0-302RH-Q HS9-302RH-Q |
CMOS Dual DPST Analog Switch; Temperature Range: -; Package: 14-FlatPack DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, CDFP14
CMOS Dual DPST Analog Switch; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, UUC
|
Intersil, Corp.
|
| STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET
N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| SOT545-3 |
plastic thermal enganced thin quad flat package; 48 leads; body 7 x 7 x 1 mm; exposed die pad
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
